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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6102 2N6103
DESCRIPTION With TO-220 package 2N6102 type with short pin APPLICATIONS For use in general-purpose amplifier and switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg

PARAMETER
CONDITIONS Open emitter
Collector-base voltage
Collector-emitter voltage Emitter-base voltage Collector current
CHA IN
SEM NG
TC=25ae
Open base
CON I
TOR DUC
VALUE 45 45 8 16 75 150 -65~150
UNIT V V V A W ae ae
Open collector
Total power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS
2N6102 2N6103
SYMBOL
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
45
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A;IB=0.5A
1.3
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A;IB=5A
3.5
V
VBE-1
Base-emitter on voltage
IC=5A ; VCE=4V
1.3
V
VBE-2
Base-emitter on voltage
IC=15A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150ae VEB=8V; IC=0
3.5 0.5 2.0
V
ICBO
Collector cut-off current
mA
IEBO
Emitter cut-off current
hFE-1
DC current gain
NG S HA
hFE-2
DC current gain
fT
Transition frequency
INC
CON EMI
IC=8A ; VCE=4V IC=15A ; VCE=4V IC=1A ; VCE=10V
TOR DUC
15 80 5 0.8
1.0
mA
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6102 2N6103
NG S HA
INC
Fig.2 Outline dimensions(unindicated tolerance:A
CON EMI
TOR DUC
0.10 mm)
3


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